P-Channel MOSFET, 9 A, 30 V PowerPAK SC-70 SIA4371EDJ-T1-GE3
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169 ֏
Кратность заказа 3000 шт.
Добавить в корзину 3000 шт.
на сумму 507 000 ֏
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay TrenchFET P-channel power MOSFET has drain current of -9 A . It is used in power management for portable and consumer, load switch, charger switches, battery switches
Технические параметры
| Channel Type | P |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain Source Voltage | 30 V |
| Mounting Type | Surface Mount |
| Package Type | PowerPAK SC-70 |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 52 ns, 62 ns |
| Id - Continuous Drain Current: | 6.4 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SC-70-6L |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 2.9 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.6 nC |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Rise Time: | 8 ns, 65 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Typical Turn-Off Delay Time: | 47 ns, 52 ns |
| Typical Turn-On Delay Time: | 7 ns, 28 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 1 |
