N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerPAK 1212-8SH SiSH892BDN-T1-GE3
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423 ֏
Кратность заказа 3000 шт.
Добавить в корзину 3000 шт.
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay N-Channel 100 V (D-S) MOSFET PowerPAK. 100 % Rg and UIS tested
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Resistance | 0.0304 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Threshold Voltage | 2.4V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK 1212-8SH |
| Pin Count | 8 |
| Series | TrenchFET |
| Transistor Material | Si |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 33 S |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerPAK-1212-8 |
| Pd - Power Dissipation: | 29 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17.4 nC |
| Rds On - Drain-Source Resistance: | 30.4 mOhms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | TrenchFET Gen IV Power MOSFET |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
| Вес, г | 1 |
