ZXTC2062E6TA, 20V 1.1W 15@10A,2V 1PCSNPN&1PCSPNP SOT-26 BIpolar TransIstors - BJT

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1 060 ֏

от 10 шт. — 660 ֏

от 30 шт. — 540 ֏

от 100 шт. — 445 ֏

1 шт. на сумму 1 060 ֏

Номенклатурный номер: 8020509079

Бренд: DIODES INC.

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	100 V, 25 V
Collector- Emitter Voltage VCEO Max:	20 V
Collector-Emitter Saturation Voltage:	140 mV, 190 mV
Configuration:	Dual
DC Current Gain hFE Max:	300 at 10 mA, 2 V
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	215 MHz, 290 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	4 A, 3.5 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-26-6
Pd - Power Dissipation:	1.7 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXTC2062
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN, PNP
Вес, г	0.03