TN2425N8-G, Транзистор N-МОП, полевой, 250В, 1,5А, 1,6Вт, SOT89-3
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см. техническую документацию
см. техническую документацию
2 470 ֏
от 10 шт. —
1 760 ֏
от 30 шт. —
1 530 ֏
от 100 шт. —
1 210 ֏
1 шт.
на сумму 2 470 ֏
Технические параметры
Brand: | Microchip Technology |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Fall Time: | 10 ns |
Id - Continuous Drain Current: | 480 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-89-3 |
Pd - Power Dissipation: | 1.6 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 3.5 Ohms |
Rise Time: | 10 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 250 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Вес, г | 0.06 |
Техническая документация
Datasheet
pdf, 661 КБ