IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
Технические параметры
| Channel Type | N |
| Maximum Collector Emitter Voltage | 1700 V |
| Maximum Continuous Collector Current | 75 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | TO-247AD |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Brand: | IXYS |
| Collector- Emitter Voltage VCEO Max: | 1.7 kV |
| Collector-Emitter Saturation Voltage: | 3.3 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 75 A |
| Continuous Collector Current Ic Max: | 75 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Manufacturer: | IXYS |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247AD-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 350 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | IXGH32N170 |
| Subcategory: | IGBTs |
| Technology: | Si |
Техническая документация
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