MMDT5451-7-F, Транзистор: NPN / PNP; биполярный
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
229 ֏
Мин. кол-во для заказа 5 шт.
от 25 шт. —
115 ֏
от 100 шт. —
93 ֏
5 шт.
на сумму 1 145 ֏
Описание
Trans GP BJT NPN / PNP 160 В 0,2 А 200 мВт 6-контактный SOT-363 T / R
Технические параметры
| Case | SOT363 |
| Collector current | 0.2A |
| Collector-emitter voltage | 160/150V |
| Kind of package | reel, tape |
| Kind of transistor | complementary pair |
| Manufacturer | DIODES INCORPORATED |
| Mounting | SMD |
| Polarisation | bipolar |
| Power dissipation | 0.2W |
| Type of transistor | NPN/PNP |
| Configuration | Dual |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Base Emitter Saturation Voltage (V) | 1 5mA 50mA|1 1mA 10mA |
| Maximum Collector Base Voltage (V) | 160 PNP|180 NPN |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Collector-Emitter Voltage (V) | 150 PNP|160 NPN |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 5 PNP|6 NPN |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 320 |
| Maximum Transition Frequency (MHz) | 300 |
| Minimum Operating Temperature (°C) | -55 |
| Number of Elements per Chip | 2 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| Product Category | Bipolar Small Signal |
| Standard Package Name | SOT-26 |
| Supplier Package | SOT-363 |
| Supplier Temperature Grade | Automotive |
| Type | PNP|NPN |
| Maximum Collector Base Voltage | 180 V |
| Maximum Collector Emitter Voltage | 160 V |
| Maximum DC Collector Current | 200 mA |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 300 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 200 mW |
| Minimum DC Current Gain | 80, 60 |
| Mounting Type | Surface Mount |
| Package Type | SOT-363(SC-88) |
| Transistor Configuration | Isolated |
| Transistor Type | NPN+PNP |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 180 V, 160 V |
| Collector- Emitter Voltage VCEO Max: | 160 V, 150 V |
| Collector-Emitter Saturation Voltage: | 200 mV, 500 mV |
| Configuration: | Dual |
| Continuous Collector Current: | -200 mA |
| DC Collector/Base Gain hfe Min: | 60 |
| DC Current Gain hFE Max: | 240 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | MMDT54 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN, PNP |
| Вес, г | 8 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet MMDT5451-7-F
pdf, 192 КБ
Datasheet MMDT5451-7-F
pdf, 781 КБ
Datasheet MMDT5451-7-F
pdf, 766 КБ
