SBR20A200CTB, Диод: выпрямительный Шоттки
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1 520 ֏
от 10 шт. —
1 030 ֏
от 50 шт. —
880 ֏
от 100 шт. —
740 ֏
1 шт.
на сумму 1 520 ֏
Описание
SBR® Super Barrier Rectifiers
Diodes Inc SBR ® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
Diodes Inc SBR ® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
Технические параметры
Brand: | Diodes Incorporated |
Configuration: | Dual Anode Common Cathode |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
If - Forward Current: | 20 A |
Ifsm - Forward Surge Current: | 180 A |
Ir - Reverse Current: | 100 uA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Package / Case: | TO-263-3 |
Packaging: | Tube |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Rectifiers |
Series: | SBR20A200 |
Subcategory: | Diodes & Rectifiers |
Technology: | Si |
Termination Style: | SMD/SMT |
Type: | Switching Diode |
Vf - Forward Voltage: | 960 mV |
Vr - Reverse Voltage: | 200 V |
Vrrm - Repetitive Reverse Voltage: | 200 V |
Diode Configuration | Common Cathode |
Diode Technology | Silicon Junction |
Maximum Forward Current | 20A |
Maximum Forward Voltage Drop | 960mV |
Maximum Operating Temperature | +175 °C |
Maximum Reverse Voltage | 200V |
Minimum Operating Temperature | -65 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 2 |
Package Type | D2PAK(TO-263) |
Pin Count | 3 |
Width | 9.65mm |
Configuration | Dual Common Cathode |
Lead Finish | Matte Tin |
Max Processing Temp | 260 |
Mounting | Surface Mount |
Operating Temperature | -65 to 175 °C |
Peak Average Forward Current | 20 A |
Peak Forward Voltage | 0.96 V |
Peak Non-Repetitive Surge Current | 180 A |
Peak Reverse Current | 100 uA |
Peak Reverse Recovery Time | 30 ns |
Peak Reverse Repetitive Voltage | 200 V |
Type | Switching Diode |
Вес, г | 1 |