IRFR220PBF-BE3, MOSFETs N-CHANNEL 200V
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870 ֏
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Описание
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TrenchFET® MOSFETsVishay / Siliconix TrenchFET ® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK ® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 13 ns |
| Forward Transconductance - Min: | 1.7 S |
| Id - Continuous Drain Current: | 4.8 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 42 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Rds On - Drain-Source Resistance: | 800 mOhms |
| Rise Time: | 22 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 7.2 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1 |
