FS150R12KE3BOSA1 3 Phase Bridge IGBT Module, 200 A 1200 V AG-ECONO3-4, Panel Mount
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.
Технические параметры
| Channel Type | N |
| Configuration | 3 Phase Bridge |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 200 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +125 °C |
| Maximum Power Dissipation | 700 W |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Panel Mount |
| Package Type | AG-ECONO3-4 |
| Transistor Configuration | 3 Phase |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 200 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Power Dissipation (mW) | 700 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Screw |
| Packaging | Tray |
| Part Status | Active |
| PCB changed | 35 |
| Pin Count | 35 |
| PPAP | No |
| Supplier Package | ECONO3-4 |
| Typical Collector Emitter Saturation Voltage (V) | 1.7 |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 419 КБ
Datasheet FS150R12KE3BOSA1
pdf, 451 КБ
FS150R12KE3BOSA1
pdf, 424 КБ
