SI2319DS-T1-BE3, MOSFET P-CHANNEL 40-V (D-S)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
940 ֏
от 10 шт. —
800 ֏
от 100 шт. —
520 ֏
от 500 шт. —
411 ֏
Добавить в корзину 1 шт.
на сумму 940 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | 3 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 25 ns |
| Id - Continuous Drain Current: | 2.3 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SI2319DS-T1-E3 |
| Pd - Power Dissipation: | 750 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.3 nC |
| Rds On - Drain-Source Resistance: | 82 mOhms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.01 |
