SI1012CR-T1-GE3, Транзистор: N-MOSFET; полевой; 20В; 0,63А; Idm: 2А; 0,15Вт; SC75A
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Описание
Trans MOSFET N-CH 20V 0.63A 3-Pin SC-75A T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 0.63 |
Maximum Drain Source Resistance (mOhm) | 396@4.5V |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 240 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | TrenchFET |
Product Category | Power MOSFET |
Standard Package Name | SC |
Supplier Package | SC-75A |
Typical Fall Time (ns) | 11 |
Typical Gate Charge @ Vgs (nC) | 1.3@8V|0.75@4.5V |
Typical Input Capacitance @ Vds (pF) | 43@10V |
Typical Rise Time (ns) | 16 |
Typical Turn-Off Delay Time (ns) | 26 |
Typical Turn-On Delay Time (ns) | 11 |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 11 ns |
Forward Transconductance - Min: | 7.5 S |
Id - Continuous Drain Current: | 600 mA |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SC-75-3 |
Part # Aliases: | SI1012CR-GE3 |
Pd - Power Dissipation: | 240 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 1.3 nC |
Rds On - Drain-Source Resistance: | 396 mOhms |
Rise Time: | 16 ns |
Series: | SI1 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 26 ns |
Typical Turn-On Delay Time: | 11 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Вес, г | 0.02 |