IRF8788TRPBF, Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R

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489 ֏

Кратность заказа 4000 шт.

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Номенклатурный номер: 8021374660

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор N-МОП, полевой, 30В, 24А, 2,5Вт, SO8

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1V
Maximum Continuous Drain Current	24 A
Maximum Drain Source Resistance	3.8 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2.35V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1.35V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	HEXFET
Typical Gate Charge @ Vgs	44 nC @ 4.5 V
Width	4mm
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	11 ns
Forward Transconductance - Min:	95 S
Id - Continuous Drain Current:	24 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOIC-8
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	44 nC
Rds On - Drain-Source Resistance:	3.04 mOhms
Rise Time:	24 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	23 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V