RGS00TS65EHRC11, IGBT Transistors TO247 650V 50A TRNCH
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см. техническую документацию
893 шт., срок 6-9 недель
7 900 ֏
от 25 шт. —
6 000 ֏
от 100 шт. —
5 200 ֏
от 450 шт. —
4 780 ֏
Добавить в корзину 1 шт.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
RGS Field Stop Trench Automotive IGBTsROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (V CE(sat) ) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.
Технические параметры
Brand: | ROHM Semiconductor |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 2.1 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 88 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | 200 nA |
Manufacturer: | ROHM Semiconductor |
Maximum Gate Emitter Voltage: | -30 V, 30 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247N-3 |
Packaging: | Tube |
Part # Aliases: | RGS00TS65EHR |
Pd - Power Dissipation: | 326 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Qualification: | AEC-Q101 |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 1 |
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг