RGS00TS65EHRC11, IGBT Transistors TO247 650V 50A TRNCH

RGS00TS65EHRC11, IGBT Transistors TO247 650V 50A TRNCH
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893 шт., срок 6-9 недель
7 900 ֏
от 25 шт.6 000 ֏
от 100 шт.5 200 ֏
от 450 шт.4 780 ֏
Добавить в корзину 1 шт. на сумму 7 900 ֏
Номенклатурный номер: 8021541439
Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (V CE(sat) ) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

Технические параметры

Brand: ROHM Semiconductor
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2.1 V
Configuration: Single
Continuous Collector Current at 25 C: 88 A
Factory Pack Quantity: Factory Pack Quantity: 30
Gate-Emitter Leakage Current: 200 nA
Manufacturer: ROHM Semiconductor
Maximum Gate Emitter Voltage: -30 V, 30 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -40 C
Mounting Style: Through Hole
Package / Case: TO-247N-3
Packaging: Tube
Part # Aliases: RGS00TS65EHR
Pd - Power Dissipation: 326 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Qualification: AEC-Q101
Subcategory: IGBTs
Technology: Si
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