BS250P, Диод специализированный TO-92-3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 030 ֏
от 10 шт. —
670 ֏
Добавить в корзину 1 шт.
на сумму 1 030 ֏
Описание
Описание Диод специализированный TO-92-3 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 230 mA |
| Maximum Drain Source Resistance | 14 Ω |
| Maximum Drain Source Voltage | 45 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 700 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | E-Line |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 2.41mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Id - Continuous Drain Current: | 230 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 700 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 14 Ohms |
| Series: | BS250 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | FET |
| Vds - Drain-Source Breakdown Voltage: | 45 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 0.3 |
