P-Channel MOSFET, 480 mA, 240 V, 3-Pin SOT-223 Diodes Inc ZVP4424GTA

Фото 1/3 P-Channel MOSFET, 480 mA, 240 V, 3-Pin SOT-223 Diodes Inc ZVP4424GTA
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см. техническую документацию
640 ֏
Кратность заказа 1000 шт.
Добавить в корзину 1000 шт. на сумму 640 000 ֏
Номенклатурный номер: 8021616574
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор P-MOSFET, полевой, -240В, -0,48А, 2,5Вт, SOT223 Характеристики
Категория Транзистор
Тип полевой
Вид MOSFET

Технические параметры

Channel Mode Enhancement
Channel Type P
Maximum Continuous Drain Current 480 mA
Maximum Drain Source Resistance 9 Ω
Maximum Drain Source Voltage 240 V
Maximum Gate Source Voltage -40 V, +40 V
Maximum Gate Threshold Voltage 2V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 2.5 W
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-223
Pin Count 3
Transistor Configuration Single
Transistor Material Si
Width 3.55mm
Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 1000
Fall Time: 20 ns
Forward Transconductance - Min: 125 mS
Id - Continuous Drain Current: 480 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-223-3
Pd - Power Dissipation: 2.5 W
Product Category: MOSFET
Product Type: MOSFET
Rds On - Drain-Source Resistance: 9 Ohms
Rise Time: 8 ns
Series: ZVP4424
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Type: FET
Typical Turn-Off Delay Time: 26 ns
Typical Turn-On Delay Time: 8 ns
Vds - Drain-Source Breakdown Voltage: 240 V
Vgs - Gate-Source Voltage: -40 V, +40 V
Vgs th - Gate-Source Threshold Voltage: 700 mV

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 649 КБ
Datasheet ZVP4424GTA
pdf, 172 КБ