P-Channel MOSFET, 480 mA, 240 V, 3-Pin SOT-223 Diodes Inc ZVP4424GTA
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
640 ֏
Кратность заказа 1000 шт.
Добавить в корзину 1000 шт.
на сумму 640 000 ֏
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор P-MOSFET, полевой, -240В, -0,48А, 2,5Вт, SOT223 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Channel Mode | Enhancement |
Channel Type | P |
Maximum Continuous Drain Current | 480 mA |
Maximum Drain Source Resistance | 9 Ω |
Maximum Drain Source Voltage | 240 V |
Maximum Gate Source Voltage | -40 V, +40 V |
Maximum Gate Threshold Voltage | 2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.5 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-223 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Width | 3.55mm |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 125 mS |
Id - Continuous Drain Current: | 480 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-223-3 |
Pd - Power Dissipation: | 2.5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 9 Ohms |
Rise Time: | 8 ns |
Series: | ZVP4424 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 26 ns |
Typical Turn-On Delay Time: | 8 ns |
Vds - Drain-Source Breakdown Voltage: | 240 V |
Vgs - Gate-Source Voltage: | -40 V, +40 V |
Vgs th - Gate-Source Threshold Voltage: | 700 mV |