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UF4C120053K4S, SiC MOSFETs 1200V/53mOhms, SICFET,G4,TO247-4

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770 шт., срок 6-8 недель

18 100 ֏

от 25 шт. — 14 200 ֏

от 100 шт. — 11 500 ֏

от 250 шт. — 9 700 ֏

1 шт. на сумму 18 100 ֏

Номенклатурный номер: 8021752114

Бренд: Qorvo Inc.

Описание

Unclassified

UF4C/SC 1200V Gen 4 SiC FETs
UnitedSiC / Qorvo UF4C/SC 1200V Gen 4 SiC FETs are a high-performance series delivering industry-best Figures of Merit. The UF4C/SC 1200V Gen 4 SiC FETs are ideal for mainstream 800V bus architectures in onboard chargers for EVs, industrial battery chargers, industrial power supplies, renewables, energy storage, welding machines, UPS, and induction heating applications. Available in 23mΩ to 70mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. This feature allows for flexible design without changing gate drive voltage, easily replacing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices.

Технические параметры

Brand:	Qorvo
Channel Mode:	Depletion
Factory Pack Quantity: Factory Pack Quantity:	30
Id - Continuous Drain Current:	34 A
Manufacturer:	Qorvo
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-4
Packaging:	Tube
Pd - Power Dissipation:	263 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	37.8 nC
Rds On - Drain-Source Resistance:	67 mOhms
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Вес, г	1