IXFN48N50, Discrete Semiconductor Modules 500V 48A
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см. техническую документацию
см. техническую документацию
46 800 ֏
от 10 шт. —
37 800 ֏
от 20 шт. —
33 100 ֏
от 50 шт. —
32 000 ֏
Добавить в корзину 1 шт.
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Описание
Semiconductors\Discrete Semiconductors\Discrete Semiconductor Modules
Технические параметры
| Brand: | IXYS |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Fall Time: | 30 ns |
| Id - Continuous Drain Current: | 48 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Screw Mounts |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-227-4 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 520 W |
| Product Category: | Discrete Semiconductor Modules |
| Product Type: | Discrete Semiconductor Modules |
| Product: | Power MOSFET Modules |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Rise Time: | 60 ns |
| Series: | HiPerFET |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | HyperFET |
| Transistor Polarity: | N-Channel |
| Type: | HiperFET |
| Typical Turn-Off Delay Time: | 100 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Вес, г | 30 |
Техническая документация
Datasheet
pdf, 161 КБ
