SSM6H19NU,LF(T, Trans MOSFET N-CH Si 40V 2A 6-Pin UDFN EP T/R

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3000 шт., срок 7-9 недель

198 ֏

Мин. кол-во для заказа 680 шт.

680 шт. на сумму 134 640 ֏

Номенклатурный номер: 8021801525

Бренд: Toshiba

Diodes, Transistors and Thyristors\FET Transistors\MOSFETs

Trans MOSFET N-CH Si 40V 2A 6-Pin UDFN EP T/R

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Material	Si
Maximum Continuous Drain Current (A)	2
Maximum Drain Source Resistance (mOhm)	198@4.5V
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Leakage Current (nA)	10
Maximum Gate Source Voltage (V)	±12
Maximum Gate Threshold Voltage (V)	1.2
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	6
Pin Count	6
PPAP	No
Product Category	Power MOSFET
Supplier Package	UDFN EP
Typical Gate Charge @ Vgs (nC)	1.1@4.2V\|1@3.6V\|0.75@2.5V
Typical Input Capacitance @ Vds (pF)	130
Typical Turn-Off Delay Time (ns)	8
Typical Turn-On Delay Time (ns)	13
Вес, г	1