FDB045AN08A0, Транзистор: N-MOSFET, полевой, 75В, 90А, 310Вт, D2PAK
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Описание
Описание Транзистор: N-MOSFET, полевой, 75В, 90А, 310Вт, D2PAK Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 45 ns |
| Id - Continuous Drain Current: | 80 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SC-70-3 |
| Part # Aliases: | FDB045AN08A0_NL |
| Pd - Power Dissipation: | 310 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 138 nC |
| Rds On - Drain-Source Resistance: | 3.9 mOhms |
| Rise Time: | 88 ns |
| Series: | FDB045AN08A0 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1092 КБ
