IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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4 890 ֏

Кратность заказа 240 шт.

Добавить в корзину 240 шт. на сумму 1 173 600 ֏

Номенклатурный номер: 8022241701

Semiconductors\Discrete Semiconductors\IGBTs

Описание Транзистор IGBT, 650В, 60,5А, 137Вт, TO247-3 Характеристики

Channel Type	N
Energy Rating	1.78mJ
Gate Capacitance	3100pF
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	80 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	274 W
Minimum Operating Temperature	-40 °C
Mounting Type	Through Hole
Number of Transistors	1
Package Type	TO-247
Pin Count	3
Switching Speed	30kHz
Transistor Configuration	Single
Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.35 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity: Factory Pack Quantity:	240
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	-20 V, +20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Part # Aliases:	IKW50N65ES5 SP001319682
Pd - Power Dissipation:	274 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	TRENCHSTOP 5 S5
Subcategory:	IGBTs
Technology:	Si
Tradename:	TRENCHSTOP
MSL(Уровень чувствительности к влажности)	1
Диапазон рабочих температур	-40…+175 °С
Мощность	рассеиваемая(Pd)-274 Вт
Описание	IGBT Trench 650 V 80 A 274 W Through Hole PG-TO247-3
Способ монтажа	Through Hole
Тип	IGBT
Упаковка	TUBE, 30 шт.
Вес, г	1