IXDI609SI, IC: driver; low-side,gate driver; SO8-EP; -9?9A; Ch: 1; 4.5?35V
3 880 ֏
от 10 шт. —
3 040 ֏
от 30 шт. —
2 650 ֏
1 шт.
на сумму 3 880 ֏
Технические параметры
| Driven Configuration | Low Side |
| Fall Time | 15ns |
| Load Type | IGBT;MOSFET |
| Number of Drivers | 1 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Peak Output Current(sink) | 9A |
| Peak Output Current(source) | 9A |
| Rise Time | 22ns |
| Supply Voltage | 4.5V~35V |
| California Prop 65 | Warning Information |
| Channel Type | Single |
| Current - Peak Output (Source, Sink) | 9A, 9A |
| ECCN | EAR99 |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| HTSUS | 8542.39.0001 |
| Input Type | Inverting |
| Logic Voltage - VIL, VIH | 0.8V, 3V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Package | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| REACH Status | REACH Unaffected |
| Rise / Fall Time (Typ) | 22ns, 15ns |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | 8-SOIC-EP |
| Voltage - Supply | 4.5V ~ 35V |
| Вес, г | 0.08 |
Техническая документация
Datasheet
pdf, 288 КБ
