SUM60020E-GE3
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см. техническую документацию
см. техническую документацию
6 700 ֏
от 2 шт. —
6 300 ֏
1 шт.
на сумму 6 700 ֏
Описание
Электроэлемент
MOSFET, N-CH, 80V, 150A, 175DEG C, 375W; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.00175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
Технические параметры
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.00175Ом |
| Power Dissipation | 375Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | TrenchFET |
| Максимальная Рабочая Температура | 175°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 80В |
| Непрерывный Ток Стока | 150А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 4В |
| Рассеиваемая Мощность | 375Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.00175Ом |
| Стиль Корпуса Транзистора | TO-263(D2PAK) |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 150 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-4 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 375 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 151.2 nC |
| Rds On - Drain-Source Resistance: | 2.47 mOhms |
| Rise Time: | 13 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 50 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1.5V |
| Maximum Continuous Drain Current | 150 A |
| Maximum Drain Source Resistance | 2.4 mΩ |
| Maximum Drain Source Voltage | 80 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 375 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 151.2 nC @ 10 V |
| Width | 9.65mm |
Техническая документация
Datasheet
pdf, 145 КБ
Datasheet SUM60020E-GE3
pdf, 145 КБ
