IKP30N65H5, TO-220-3 IGBTs ROHS
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см. техническую документацию
см. техническую документацию
2 380 ֏
Кратность заказа 5 шт.
от 50 шт. —
2 160 ֏
от 150 шт. —
2 070 ֏
5 шт.
на сумму 11 900 ֏
Описание
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high-speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. Infineon H5 IGBTs offer leading efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid- to high-range switching frequency converters.
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.65 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 55 A |
Factory Pack Quantity: | 500 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Operating Temperature Range: | -40 C to+175 C |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Part # Aliases: | SP001133084 IKP30N65H5XKSA1 |
Pd - Power Dissipation: | 188 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 2238 КБ