IXTY08N100P, Транзистор N-MOSFET, 1кВ, 0,8А, 42Вт, TO252, 750нс
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Описание
1kV 800mA 42W 20Ω@500mA,10V 4V@50uA null TO-252AA MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 800mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20Ω@500mA, 10V |
| Drain Source Voltage (Vdss) | 1kV |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@50uA |
| Input Capacitance (Ciss@Vds) | 240pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 42W |
| Total Gate Charge (Qg@Vgs) | 11.3nC@10V |
| Type | null |
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 70 |
| Fall Time: | 34 ns |
| Id - Continuous Drain Current: | 800 mA |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Packaging: | Tube |
| Pd - Power Dissipation: | 42 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.3 nC |
| Rds On - Drain-Source Resistance: | 20 Ohms |
| Rise Time: | 37 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 19 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.35 |
Техническая документация
Datasheet
pdf, 283 КБ
Datasheet IXTY08N100P
pdf, 257 КБ
