DMN53D0L-7, Транзистор N-MOSFET, полевой, 50В, 0,2А, 0,37Вт, SOT23
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Описание
Описание Транзистор N-MOSFET, полевой, 50В, 0,2А, 0,37Вт, SOT23
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.4V |
Maximum Continuous Drain Current | 500 mA |
Maximum Drain Source Resistance | 4.5 Ω |
Maximum Drain Source Voltage | 50 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 1.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 540 mW |
Minimum Gate Threshold Voltage | 0.8V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 0.6 nC @ 4.5 V |
Width | 1.4mm |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 0.5 |
Maximum Drain Source Resistance (mOhm) | 1600@10V |
Maximum Drain Source Voltage (V) | 50 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 1.5 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 540 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
PPAP | No |
Product Category | Small Signal |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Supplier Temperature Grade | Automotive |
Typical Fall Time (ns) | 11 |
Typical Gate Charge @ Vgs (nC) | 0.6@4.5V |
Typical Input Capacitance @ Vds (pF) | 46@25V |
Typical Rise Time (ns) | 2.5 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Turn-On Delay Time (ns) | 2.7 |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 11 ns |
Id - Continuous Drain Current: | 500 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 360 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 1.2 nC |
Rds On - Drain-Source Resistance: | 1.6 Ohms |
Rise Time: | 2.5 ns |
Series: | DMN53 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 18.9 ns |
Typical Turn-On Delay Time: | 2.7 ns |
Vds - Drain-Source Breakdown Voltage: | 50 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Вес, г | 0.01 |