DXTN07100BFG-7, TRANS NPN 100V 2A POWERDI3
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335 ֏
Мин. кол-во для заказа 3 шт.
от 10 шт. —
295 ֏
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256 ֏
от 500 шт. —
243 ֏
3 шт.
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Описание
DXTN07x Bipolar Junction Transistors (BJTs)
Diodes Incorporated DXTN07x Bipolar Junction Transistors (BJTs) are offered in smaller, thermally efficient PowerDI®3333-8 packages. These transistors are contained in a PowerDI3333 surface mount 3.3mm x 3.3mm x 0.8mm package. The package occupies 70% less printed circuit board (PCB) space than the traditional small-outline transistor (SOT223). PowerDI3333 packages increase PCB throughput with wettable flanks, which help facilitate high-speed, automatic optical inspection (AOI) of solder joints. These NPN and PNP transistors can perform functions such as linear or LDO regulation, gate driving of MOSFETs or insulated-gate bipolar transistors (IGBT) and load switches across industrial and consumer applications.
Diodes Incorporated DXTN07x Bipolar Junction Transistors (BJTs) are offered in smaller, thermally efficient PowerDI®3333-8 packages. These transistors are contained in a PowerDI3333 surface mount 3.3mm x 3.3mm x 0.8mm package. The package occupies 70% less printed circuit board (PCB) space than the traditional small-outline transistor (SOT223). PowerDI3333 packages increase PCB throughput with wettable flanks, which help facilitate high-speed, automatic optical inspection (AOI) of solder joints. These NPN and PNP transistors can perform functions such as linear or LDO regulation, gate driving of MOSFETs or insulated-gate bipolar transistors (IGBT) and load switches across industrial and consumer applications.
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 120 V |
Collector- Emitter Voltage VCEO Max: | 100 V |
Collector-Emitter Saturation Voltage: | 150 mV |
Configuration: | Single |
Continuous Collector Current: | 2 A |
DC Collector/Base Gain hfe Min: | 100 |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 7 V |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Gain Bandwidth Product fT: | 175 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 2 A |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | PowerDI3333-8 |
Pd - Power Dissipation: | 3.1 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 862 КБ