CSD19531Q5AT, Транзистор: N-MOSFET, полевой, 100В, 100А, 125Вт, VSONP8, 5x6мм

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Номенклатурный номер: 8022464535

Описание Транзистор: N-MOSFET, полевой, 100В, 100А, 125Вт, VSONP8, 5x6мм Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Resistance	7.8 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	3.3V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	125 W
Minimum Gate Threshold Voltage	2.2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	VSONP
Pin Count	8
Series	NexFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	37 nC @ 10 V
Width	5mm
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	500
Fall Time:	5.2 ns
Forward Transconductance - Min:	82 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	3.3 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	37 nC
Rds On - Drain-Source Resistance:	6.4 mOhms
Rise Time:	5.8 ns
Series:	CSD19531Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	NexFET Power MOSFET
Typical Turn-Off Delay Time:	18.4 ns
Typical Turn-On Delay Time:	6 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Вес, г	0.29