IRFR9014PBF
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
670 ֏
Мин. кол-во для заказа 3 шт.
Добавить в корзину 3 шт.
на сумму 2 010 ֏
Описание
Описание Транзистор P-МОП, полевой, 60 В 5.1 А 2.5 Вт D-PAK Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 5.1 |
| Maximum Drain Source Resistance (mOhm) | 500 10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 31 |
| Typical Gate Charge @ 10V (nC) | 12(Max) |
| Typical Gate Charge @ Vgs (nC) | 12(Max)10V |
| Typical Gate to Drain Charge (nC) | 5.1(Max) |
| Typical Gate to Source Charge (nC) | 3.8(Max) |
| Typical Input Capacitance @ Vds (pF) | 270 25V |
| Typical Output Capacitance (pF) | 170 |
| Typical Reverse Recovery Charge (nC) | 96 |
| Typical Rise Time (ns) | 63 |
| Typical Turn-Off Delay Time (ns) | 9.6 |
| Typical Turn-On Delay Time (ns) | 11 |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 31 ns |
| Forward Transconductance - Min: | 1.4 S |
| Id - Continuous Drain Current: | 5.1 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-252-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 12 nC |
| Rds On - Drain-Source Resistance: | 500 mOhms |
| Rise Time: | 63 ns |
| Series: | IRFR/U |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 9.6 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Current - Continuous Drain (Id) @ 25В°C | 5.1A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Cut Tape(CT) |
| Power Dissipation (Max) | 2.5W(Ta), 25W(Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 3.1A, 10V |
| Series | - |
| Supplier Device Package | D-Pak |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Maximum Continuous Drain Current | 5.1 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK(TO-252) |
| Вес, кг | 64 |
Техническая документация
Datasheet
pdf, 1158 КБ
Документация
pdf, 1153 КБ
