CSD25211W1015
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см. техническую документацию
см. техническую документацию
352 ֏
Мин. кол-во для заказа 5 шт.
от 10 шт. —
273 ֏
от 30 шт. —
234 ֏
от 100 шт. —
198 ֏
5 шт.
на сумму 1 760 ֏
Описание
TI P-Channel MOSFETs - 8-23-12
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 14.2 ns |
| Forward Transconductance - Min: | 12 S |
| Id - Continuous Drain Current: | 3.2 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DSBGA-6 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.4 nC |
| Rds On - Drain-Source Resistance: | 44 mOhms |
| Rise Time: | 8.8 ns |
| Series: | CSD25211W1015 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 36.9 ns |
| Typical Turn-On Delay Time: | 13.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -6 V, +6 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Вес, г | 1 |
