SI4431CDY-T1-GE3
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см. техническую документацию
см. техническую документацию
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Описание
Описание Транзистор: P-MOSFET, полевой, -30В, -7,2А, Idm: -30А, 2,7Вт, SO8 Характеристики
| Категория | Диод |
| Тип | защитный |
Технические параметры
| Continuous Drain Current (Id) @ 25В°C | 9A(Tc) |
| Power Dissipation-Max (Ta=25В°C) | 4.2W(Tc) |
| Rds On - Drain-Source Resistance | 32mО© @ 7A,10V |
| Transistor Polarity | P Channel |
| Vds - Drain-Source Breakdown Voltage | 30V |
| Vgs - Gate-Source Voltage | 2.5V @ 250uA |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 7.2 A |
| Maximum Drain Source Resistance | 49 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 4.2 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Width | 4mm |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 9 ns |
| Forward Transconductance - Min: | 18 S |
| Id - Continuous Drain Current: | 9 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOIC-8 |
| Part # Aliases: | SI4431CDY-GE3 |
| Pd - Power Dissipation: | 4.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Rds On - Drain-Source Resistance: | 32 mOhms |
| Rise Time: | 13 ns |
| Series: | SI4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 23 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
