IRF740STRLPBF
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см. техническую документацию
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720 ֏
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на сумму 2 160 ֏
Описание
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R
Технические параметры
Brand | Vishay/Siliconix |
Factory Pack Quantity | 800 |
Manufacturer | Vishay |
Mounting Style | SMD/SMT |
Package / Case | TO-263-3 |
Packaging | Cut Tape or Reel |
Product Category | MOSFET |
Product Type | MOSFET |
Series | IRF |
Subcategory | MOSFETs |
Technology | Si |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 10 |
Maximum Drain Source Resistance (mOhm) | 550 10V |
Maximum Drain Source Voltage (V) | 400 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 3100 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Tab | Tab |
Typical Fall Time (ns) | 24 |
Typical Gate Charge @ 10V (nC) | 63(Max) |
Typical Gate Charge @ Vgs (nC) | 63(Max)10V |
Typical Input Capacitance @ Vds (pF) | 1400 25V |
Typical Rise Time (ns) | 27 |
Typical Turn-Off Delay Time (ns) | 50 |
Typical Turn-On Delay Time (ns) | 14 |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 800 |
Id - Continuous Drain Current: | 10 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | D2PAK-3(TO-263-3) |
Pd - Power Dissipation: | 125 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 63 nC |
Rds On - Drain-Source Resistance: | 550 mOhms |
REACH - SVHC: | Details |
Series: | IRF |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 400 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 3 |
Техническая документация
Datasheet
pdf, 198 КБ
Datasheet IRF740STRLPBF
pdf, 175 КБ