CSD18540Q5B
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Описание
MOSFET, N CH, 60V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:195W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
Технические параметры
Brand | Texas Instruments |
Configuration | Single |
Factory Pack Quantity | 250 |
Fall Time | 3 ns |
Forward Transconductance - Min | 116 S |
Id - Continuous Drain Current | 100 A |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | VSON-8 |
Packaging | Reel |
Pd - Power Dissipation | 195 W |
Product Category | MOSFET |
Qg - Gate Charge | 41 nC |
Rds On - Drain-Source Resistance | 2.6 mOhms |
Rise Time | 9 ns |
RoHS | Details |
Series | CSD18540Q5B |
Technology | Si |
Tradename | NextFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 6 ns |
Unit Weight | 0.000847 oz |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.9 V |
Вес, г | 5 |
Техническая документация
Datasheet CSD18540Q5BT
pdf, 462 КБ