CSD16323Q3
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Описание
NexFET N-Channel Power MOSFETs
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
RoHS Compliant | Yes |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 6.3 ns |
Id - Continuous Drain Current: | 60 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 74 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 6.2 nC |
Rds On - Drain-Source Resistance: | 4.5 mOhms |
Rise Time: | 15 ns |
Series: | CSD16323Q3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 13 ns |
Typical Turn-On Delay Time: | 5.3 ns |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -8 V, +10 V |
Vgs th - Gate-Source Threshold Voltage: | 900 mV |
Вес, г | 7 |
Техническая документация
Документация
pdf, 451 КБ