CSD17313Q2
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см. техническую документацию
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132 ֏
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13 шт.
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Описание
Texas Instruments NexFET™ Power MOSFET
The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Development Kit: | TMDSCSK388, TMDSCSK8127 |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 1.3 ns |
Id - Continuous Drain Current: | 5 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | WSON-6 |
Pd - Power Dissipation: | 17 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 2.1 nC |
Rds On - Drain-Source Resistance: | 30 mOhms |
Rise Time: | 3.9 ns |
Series: | CSD17313Q2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 4.2 ns |
Typical Turn-On Delay Time: | 2.8 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 900 mV |
Channel Type | N Channel |
Drain Source On State Resistance | 0.024Ом |
Power Dissipation | 2.3Вт |
Количество Выводов | 6вывод(-ов) |
Максимальная Рабочая Температура | 150°C |
Монтаж транзистора | Surface Mount |
Напряжение Измерения Rds(on) | 8В |
Напряжение Истока-стока Vds | 30В |
Непрерывный Ток Стока | 5А |
Полярность Транзистора | N Канал |
Пороговое Напряжение Vgs | 1.3В |
Рассеиваемая Мощность | 2.3Вт |
Сопротивление во Включенном Состоянии Rds(on) | 0.024Ом |
Стиль Корпуса Транзистора | SON |
Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
Вес, г | 7 |