CSD87503Q3E

Изображения служат только для ознакомления,
см. техническую документацию

1 330 ֏

Мин. кол-во для заказа 2 шт.

от 10 шт. — 1 150 ֏

от 30 шт. — 1 010 ֏

Добавить в корзину 2 шт. на сумму 2 660 ֏

Номенклатурный номер: 8022933240

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	8 ns
Forward Transconductance - Min:	24 S
Id - Continuous Drain Current:	10 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	VSON-8
Pd - Power Dissipation:	15.6 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	42.8 nC
Rds On - Drain-Source Resistance:	17.3 mOhms
Rise Time:	40 ns
Series:	CSD87503Q3E
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Dual Dual Drain Common Source
Maximum Continuous Drain Current - (A)	10
Maximum Drain Source Resistance - (mOhm)	16.9@10V
Maximum Drain Source Voltage - (V)	30
Maximum Gate Source Voltage - (V)	??20
Maximum Power Dissipation - (mW)	2600
Military	No
Number of Elements per Chip	2
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	8
Standard Package Name	SON
Supplier Package	VSON EP
Typical Gate Charge @ 10V - (nC)	32.9
Typical Gate Charge @ Vgs - (nC)	13.4@4.5VI32.9@10V
Typical Input Capacitance @ Vds - (pF)	782
Вес, г	990