IRF740BPBF
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
800 ֏
Мин. кол-во для заказа 3 шт.
от 10 шт. —
720 ֏
от 50 шт. —
620 ֏
от 100 шт. —
560 ֏
Добавить в корзину 3 шт.
на сумму 2 400 ֏
Описание
Описание Транзистор N-МОП, полевой, 400 В 10 А 147 Вт TO-220
Технические параметры
| Brand | Vishay Semiconductors |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 24 ns |
| Forward Transconductance - Min | 5.8 S |
| Id - Continuous Drain Current | 10 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 125 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 63 nC |
| Rds On - Drain-Source Resistance | 550 mOhms |
| Rise Time | 27 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 50 ns |
| Typical Turn-On Delay Time | 14 ns |
| Unit Weight | 0.211644 oz |
| Vds - Drain-Source Breakdown Voltage | 400 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Case | TO220AB |
| Drain current | 10A |
| Drain-source voltage | 400V |
| Gate charge | 30nC |
| Gate-source voltage | ±30V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting | THT |
| On-state resistance | 0.6Ω |
| Polarisation | unipolar |
| Power dissipation | 147W |
| Pulsed drain current | 23A |
| Type of transistor | N-MOSFET |
| Вес, г | 1 |
Техническая документация
Документация
pdf, 283 КБ
