CSD19534Q5A
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Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 47 S |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 63 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Rds On - Drain-Source Resistance: | 15.1 mOhms |
| Rise Time: | 14 ns |
| Series: | CSD19534Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Resistance | 1.51e+007 O |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Threshold Voltage | 2.4V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSONP |
| Pin Count | 8 |
| Series | NexFET |
| Transistor Material | Si |
| Automotive | No |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Material | Si |
| Maximum Continuous Drain Current (A) | 50 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 10 |
| Maximum Diode Forward Voltage (V) | 1 |
| Maximum Drain Source Resistance (mOhm) | 15.1@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Resistance (Ohm) | 2.2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3.4 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 3200 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.2 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 137 |
| Minimum Gate Threshold Voltage (V) | 2.4 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Process Technology | NexFET |
| Product Category | Power MOSFET |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Fall Time (ns) | 6 |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Gate Charge @ Vgs (nC) | 17@10V |
| Typical Gate Plateau Voltage (V) | 4.1 |
| Typical Gate Threshold Voltage (V) | 2.8 |
| Typical Gate to Drain Charge (nC) | 3.2 |
| Typical Gate to Source Charge (nC) | 5.1 |
| Typical Input Capacitance @ Vds (pF) | 1290@50V |
| Typical Output Capacitance (pF) | 257 |
| Typical Reverse Recovery Charge (nC) | 134 |
| Typical Reverse Recovery Time (ns) | 53 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 5.7@50V |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Typical Turn-On Delay Time (ns) | 9 |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
Техническая документация
Datasheet CSD19534Q5A
pdf, 398 КБ
