CSD19538Q3AT
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Описание
Описание Транзистор: N-MOSFET, полевой, 100В, 15А, 23Вт, VSONP8, 3,3x3,3мм Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 750 |
| Fall Time: | 2 ns |
| Id - Continuous Drain Current: | 15 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 2.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 4.3 nC |
| Rds On - Drain-Source Resistance: | 61 mOhms |
| Rise Time: | 3 ns |
| Series: | CSD19538Q3A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 7 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.2 V |
| Continuous Drain Current (Id) | 15A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 59mΩ@5A, 10V |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.8V@250uA |
| Input Capacitance (Ciss@Vds) | 454pF@50V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2.8W;23W |
| Total Gate Charge (Qg@Vgs) | 4.3nC@10V |
| Type | null |
