CSD25501F3
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Описание
CSD25501F3 –20V 64mΩ, P-Channel FemtoFET™ MOSFET
Texas Instruments CSD25501F3 -20V 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of -6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above -6V.
Texas Instruments CSD25501F3 -20V 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of -6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above -6V.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 945 ns |
| Forward Transconductance - Min: | 3.4 S |
| Id - Continuous Drain Current: | 3.6 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PICOSTAR-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.02 nC |
| Rds On - Drain-Source Resistance: | 260 mOhms |
| Rise Time: | 428 ns |
| Series: | CSD25501F3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 1154 ns |
| Typical Turn-On Delay Time: | 474 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.05 V |
| Current - Continuous Drain (Id) @ 25В°C | 3.6A(Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.33nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 385pF @ 10V |
| Manufacturer | Texas Instruments |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 3-XFLGA |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 500mW(Ta) |
| Rds On (Max) @ Id, Vgs | 76mOhm @ 400mA, 4.5V |
| Series | FemtoFETв(ў |
| Supplier Device Package | 3-LGA(0.73x0.64) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | -20V |
| Vgs(th) (Max) @ Id | 1.05V @ 250ВµA |
Техническая документация
Datasheet
pdf, 1666 КБ
Документация
pdf, 516 КБ
