CSD87501L
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Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 712 ns, 712 ns |
| Forward Transconductance - Min: | 48 S, 48 S |
| Id - Continuous Drain Current: | 14 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | BGA-10 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 40 nC |
| Rds On - Drain-Source Resistance: | 4.6 mOhms |
| Rise Time: | 260 ns, 260 ns |
| Series: | CSD87501L |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 709 ns, 709 ns |
| Typical Turn-On Delay Time: | 164 ns, 164 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Brand | Texas Instruments |
| Configuration | Dual |
| Factory Pack Quantity | 250 |
| Fall Time | 712 ns |
| Height | 0.2 mm |
| Id - Continuous Drain Current | 14 A |
| Length | 3.37 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | BGA-10 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 15 nC |
| Rds On - Drain-Source Resistance | 4.6 mOhm |
| Rise Time | 260 ns |
| RoHS | Details |
| Series | CSD87501L |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 709 ns |
| Typical Turn-On Delay Time | 164 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Width | 1.47 mm |
| Вес, г | 0.0031 |
Техническая документация
Datasheet CSD87501L
pdf, 1509 КБ
