IRFR110TRPBF

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Номенклатурный номер: 8024070443

Описание

Транзистор полевой MOSFET N-канальный 100В 4.3A

Технические параметры

EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Maximum Positive Gate Source Voltage (V) 20
Maximum Diode Forward Voltage (V) 2.5
Product Category Power MOSFET
Configuration Single Dual Drain
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Operating Junction Temperature (°C) -55 to 150
Maximum Continuous Drain Current (A) 4.3
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 25
Maximum Drain Source Resistance (mOhm) 540@10V
Typical Gate Charge @ Vgs (nC) 8.3(Max)@10V
Typical Gate Charge @ 10V (nC) 8.3(Max)
Typical Input Capacitance @ Vds (pF) 180@25V
Maximum Power Dissipation (mW) 2500
Typical Fall Time (ns) 9.4
Typical Rise Time (ns) 16
Typical Turn-Off Delay Time (ns) 15
Typical Turn-On Delay Time (ns) 6.9
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Standard Package Name TO-252
Pin Count 3
Supplier Package DPAK
Military No
Mounting Surface Mount
Package Height 2.39(Max)
Package Length 6.73(Max)
Package Width 6.22(Max)
PCB changed 2
Tab Tab

Техническая документация

Datasheet
pdf, 772 КБ