IRFR9220TRPBF
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630 ֏
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540 ֏
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Описание
The Vishay third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area.
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 3.6 |
Maximum Diode Forward Voltage (V) | 6.3 |
Maximum Drain Source Resistance (mOhm) | 1500@10V |
Maximum Drain Source Voltage (V) | 200 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 100 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 2500 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 14 |
Minimum Gate Threshold Voltage (V) | 2 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Process Technology | HEXFET |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 19 |
Typical Gate Charge @ 10V (nC) | 20(Max) |
Typical Gate Charge @ Vgs (nC) | 20(Max)@10V |
Typical Gate Plateau Voltage (V) | 7.3 |
Typical Gate to Drain Charge (nC) | 11(Max) |
Typical Gate to Source Charge (nC) | 3.3(Max) |
Typical Input Capacitance @ Vds (pF) | 340@25V |
Typical Output Capacitance (pF) | 110 |
Typical Reverse Recovery Charge (nC) | 970 |
Typical Reverse Recovery Time (ns) | 150 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 33@25V |
Typical Rise Time (ns) | 27 |
Typical Turn-Off Delay Time (ns) | 7.3 |
Typical Turn-On Delay Time (ns) | 8.8 |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Fall Time: | 19 ns |
Id - Continuous Drain Current: | 3.6 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Part # Aliases: | IRFR9220TRPBF-BE3 |
Pd - Power Dissipation: | 42 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 20 nC |
Rds On - Drain-Source Resistance: | 1.5 Ohms |
Rise Time: | 27 ns |
Series: | IRFR/U |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 7.3 ns |
Typical Turn-On Delay Time: | 8.8 ns |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Maximum Continuous Drain Current | 3.6 A |
Maximum Drain Source Resistance | 1.5 Ω |
Maximum Drain Source Voltage | 200 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 42 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | DPAK(TO-252) |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 20 nC @ 10 V |
Width | 6.22mm |