CSD19532KTT, Транзистор: N-MOSFET
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Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Channel Type | N |
| Maximum Continuous Drain Current | 200 V |
| Maximum Drain Source Voltage | 100 V |
| Mounting Type | Surface Mount |
| Package Type | DDPAK/TO-263 |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 113 S |
| Id - Continuous Drain Current: | 200 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 250 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 44 nC |
| Rds On - Drain-Source Resistance: | 5.6 mOhms |
| Rise Time: | 3 ns |
| Series: | CSD19532KTT |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Continuous Drain Current (A) | 200 |
| Maximum Diode Forward Voltage (V) | 1 |
| Maximum Drain Source Resistance (mOhm) | 5.6@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3.2 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 250000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 4 |
| PPAP | No |
| Process Technology | NexFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-263 |
| Supplier Package | DDPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 2 |
| Typical Gate Charge @ 10V (nC) | 44 |
| Typical Gate Charge @ Vgs (nC) | 44@10V |
| Typical Gate Threshold Voltage (V) | 2.6 |
| Typical Gate to Drain Charge (nC) | 5.6 |
| Typical Gate to Source Charge (nC) | 17 |
| Typical Input Capacitance @ Vds (pF) | 3890@50V |
| Typical Rise Time (ns) | 3 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Continuous Drain Current - (A) | 200 |
| Maximum Drain Source Resistance - (mOhm) | 5.6@10V |
| Maximum Drain Source Voltage - (V) | 100 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 3.2 |
| Maximum Power Dissipation - (mW) | 250000 |
| Military | No |
| Operating Temperature - (??C) | -55~175 |
| Typical Gate Charge @ 10V - (nC) | 44 |
| Typical Gate Charge @ Vgs - (nC) | 44@10V |
| Typical Input Capacitance @ Vds - (pF) | 3890@50V |
| Вес, г | 1.78 |
Техническая документация
Datasheet
pdf, 397 КБ
