CSD19537Q3, Транзисторы и сборки MOSFET DFN8
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см. техническую документацию
см. техническую документацию
1 370 ֏
от 10 шт. —
880 ֏
от 30 шт. —
750 ֏
от 100 шт. —
630 ֏
1 шт.
на сумму 1 370 ֏
Описание
Transistors/Thyristors\MOSFETs
VSON-8-EP(3.3x3.3) MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 50A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 14.5mΩ@10V, 10A |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.6V@250uA |
| Power Dissipation (Pd) | 2.8W |
| Type | N Channel |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 3 ns |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 83 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Rds On - Drain-Source Resistance: | 14.5 mOhms |
| Rise Time: | 3 ns |
| Series: | CSD19537Q3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Вес, г | 0.1 |
