VB60100C-E3/4W, 30 AMP 120 VOLT Dual TrenchMOS
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см. техническую документацию
см. техническую документацию
2 200 ֏
Кратность заказа 50 шт.
от 100 шт. —
1 850 ֏
от 500 шт. —
1 210 ֏
от 2000 шт. —
1 130 ֏
50 шт.
на сумму 110 000 ֏
Описание
Semiconductors\Discrete Semiconductors\Diodes & Rectifiers
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure.
Технические параметры
| Average Forward Current | 60А |
| Forward Surge Current | 320А |
| Forward Voltage Max | 790мВ |
| Repetitive Peak Reverse Voltage | 100В |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | TMBS |
| Максимальная Рабочая Температура | 150°C |
| Стиль Корпуса Диода | TO-263AB |
| Тип Монтажа Диода | SMD(Поверхностный Монтаж) |
| Brand: | Vishay General Semiconductor |
| Configuration: | Dual Anode Common Cathode |
| Factory Pack Quantity: Factory Pack Quantity: | 8000 |
| If - Forward Current: | 60 A |
| Ifsm - Forward Surge Current: | 320 A |
| Ir - Reverse Current: | 1 mA |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK(TO-263AB) |
| Packaging: | Tube |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Rectifiers |
| Subcategory: | Diodes & Rectifiers |
| Technology: | Si |
| Tradename: | TMBS |
| Type: | Schottky Diode |
| Vf - Forward Voltage: | 790 mV |
| Vrrm - Repetitive Reverse Voltage: | 100 V |
| Diode Configuration | Common Cathode |
| Diode Technology | Schottky Barrier |
| Diode Type | Schottky |
| Maximum Continuous Forward Current | 60A |
| Maximum Forward Voltage Drop | 790mV |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | D2PAK(TO-263) |
| Peak Non-Repetitive Forward Surge Current | 320A |
| Peak Reverse Repetitive Voltage | 100V |
| Pin Count | 3 |
| Rectifier Type | Schottky Rectifier |