P-Channel MOSFET, 30.3 A, 30 V, 6-Pin PowerPAK SC-70 SiA471DJ-T1-GE3

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720 ֏

Кратность заказа 25 шт.

Добавить в корзину 25 шт. на сумму 18 000 ֏

Номенклатурный номер: 8025966522

Semiconductors\Discrete Semiconductors\MOSFETs

P-Channel 30 V (D-S) MOSFET. TrenchFET® Gen IV p-channel power MOSFET Thermally enhanced PowerPAK® SC-70 package

Channel Mode	Enhancement
Channel Type	P
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	30.3 A
Maximum Drain Source Resistance	24 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +16 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	19.2 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PowerPAK SC-70
Pin Count	6
Transistor Configuration	Single
Typical Gate Charge @ Vgs	18.5 nC @ 10 V
Width	2.15mm
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	18 ns
Forward Transconductance - Min:	40 S
Id - Continuous Drain Current:	30.3 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SC-70-6
Pd - Power Dissipation:	19.2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	18.5 nC
Rds On - Drain-Source Resistance:	11.5 mOhms
Rise Time:	95 ns
Series:	SIA
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +16 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Вес, г	0.01