Bipolar junction transistor, PNP, -1 A, -60 V, SMD, SOT-23, FMMT591

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710 ֏

от 10 шт. — 418 ֏

от 50 шт. — 278 ֏

от 250 шт. — 215 ֏

1 шт. на сумму 710 ֏

Номенклатурный номер: 8026533451

Бренд: DIODES INC.

Semiconductors\Power Semiconductors\Bipolar Transistors

PNP transistor, FMMT591, DIODES

PNP medium power transistor in SOT23 case.

Features

Assembly	SMD
Collector current	-1 A
Enclosure	SOT-23
Max DC amplification	300 mA
max. operating temperature	150 °C
max.voltage between collector and base Vcbo	-80 V
max.voltage between collector and emitter Vceo	-60 V
Min DC gain	100 mA
min. operating temperature	-55 °C
Power dissipation	0.5 W
Rated current	2 A
Saturation voltage	-350 mV
Transit frequency fTmin	150 MHz
Version	PNP
Brand	Diodes Incorporated
Collector- Base Voltage VCBO	-80 V
Collector- Emitter Voltage VCEO Max	-60 V
Collector-Emitter Saturation Voltage	-295 mV
Configuration	Single
Continuous Collector Current	-1 A
DC Collector/Base Gain hfe Min	300 at 1 mA at 5 V, 300 at 100 mA at 5 V, 250 at 500 mA at 5 V, 160 at 1 A at 5 V, 30 at 2 A at 5 V
DC Current Gain hFE Max	300 at 1 mA at 5 V
Emitter- Base Voltage VEBO	-5 V
Factory Pack Quantity	3000
Gain Bandwidth Product fT	150 MHz
Height	1.02 mm
Length	3.04 mm
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	1 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Packaging	Reel
Pd - Power Dissipation	0.5 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	FMMT59
Transistor Polarity	PNP
Width	1.4 mm