CSD17310Q5A, Транзистор полевой MOSFET N-канальный 30В 21A/100А
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 30В 21A/100А
Технические параметры
| Корпус | VSON8-HR | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Development Kit: | TPS40007EVM-001, TPS51220EVM | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 5 ns | |
| Forward Transconductance - Min: | 85 S | |
| Id - Continuous Drain Current: | 100 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | VSONP-8 | |
| Pd - Power Dissipation: | 3.1 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 8.9 nC | |
| Rds On - Drain-Source Resistance: | 5.1 mOhms | |
| Rise Time: | 11.6 ns | |
| Series: | CSD17310Q5A | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 15 ns | |
| Typical Turn-On Delay Time: | 6.5 ns | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -8 V, +8 V | |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV | |
| Transistor Polarity | N Channel; Continuous Drain Current Id | |
| Вес, г | 0.15 |
