Bipolar junction transistor, NPN, 1 A, 45 V, THT, e-line, ZTX450
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см. техническую документацию
см. техническую документацию
800 ֏
от 10 шт. —
660 ֏
от 25 шт. —
436 ֏
от 125 шт. —
357 ֏
1 шт.
на сумму 800 ֏
Описание
Semiconductors\Power Semiconductors
Технические параметры
| Maximum Collector Base Voltage | 60 V |
| Maximum Collector Emitter Voltage | 45 V |
| Maximum DC Collector Current | 1 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 150 MHz |
| Maximum Operating Temperature | +200 °C |
| Maximum Power Dissipation | 1 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 60 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Configuration: | Single |
| Continuous Collector Current: | 1 A |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 150 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZTX450 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Case | TO92 |
| Collector current | 1A |
| Collector-emitter voltage | 45V |
| Kind of package | bulk |
| Manufacturer | DIODES INCORPORATED |
| Mounting | THT |
| Polarisation | bipolar |
| Power dissipation | 1W |
| Type of transistor | NPN |
| Collector Current (Ic) | 1A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@150mA, 15mA |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Power Dissipation (Pd) | 1W |
| Transition Frequency (fT) | 150MHz |
| Вес, г | 0.17 |
