ZXTN25012EFLTA, Транзистор биполярный BJT 50 нА 12 В 350мВт 55 при 15 А, 2 В 2 А 260 МГц 230 мВ при 5 А, 100 мА NPN -55°C+150°C@(Tj) SOT-23

Фото 1/5 ZXTN25012EFLTA, Транзистор биполярный BJT 50 нА 12 В 350мВт 55 при 15 А, 2 В 2 А 260 МГц 230 мВ при 5 А, 100 мА NPN -55°C+150°C@(Tj) SOT-23
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322 ֏
от 10 шт.198 ֏
1 шт. на сумму 322 ֏
Номенклатурный номер: 8026989971
Бренд: DIODES INC.

Описание

Транзисторы
Описание 50nA 12V 350mW 55@15A,2V 2A 260MHz 230mV@5A,100mA NPN -55°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT

Технические параметры

Automotive No
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Base Emitter Saturation Voltage (V) 0.95 40mA 2A
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 12
Maximum DC Collector Current (A) 2
Maximum Emitter Base Voltage (V) 7
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 350
Maximum Transition Frequency (MHz) 260(Typ)
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Packaging Tape and Reel
Part Status Active
PCB changed 3
Pin Count 3
PPAP No
Product Category Bipolar Small Signal
Standard Package Name SOT-23
Supplier Package SOT-23
Type NPN
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Voltage 12 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 350 mW
Minimum DC Current Gain 500
Mounting Type Surface Mount
Package Type SOT-23
Transistor Configuration Single
Transistor Type NPN
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 20 V
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 235 mV
Configuration: Single
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 260 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 350 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZXTN250
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 10

Техническая документация

Datasheet
pdf, 482 КБ
Datasheet
pdf, 1680 КБ
Datasheet ZXTN25012EFLTA
pdf, 470 КБ